Publications
- Epitaxial high-K barrier AlBN/GaN HEMTs, Appl. Phys. Lett. 126, 112906 (2025): Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto, Saurabh Vishwakarma, Siyuan Ma, Akshey Dhar, Yu-Hsin Chen, Joseph Casamento, David J Smith, Huili Grace Xing, Debdeep Jena
- AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz, Applied Physics Express 18, 016506 (2025): Kazuki Nomoto*, Joseph Casamento*, Thai-Son Nguyen, Lei Li, Hyunjea Lee, Chandrashekhar Savant, Austin Lee Hickman, Takuya Maeda, Jimy Encomendero, Ved Gund, Timothy Vasen, Shamima Afroz, Daniel Hannan, James C.M. Hwang, Debdeep Jena, and Huili Grace Xing
- Proximity Ferroelectricity in Wurtzite Ferroelectrics, Nature 637,574–579 (2025): Chloe H. Skidmore, R. Jackson Spurling, John Hayden, Steven M. Baksa, Drew Behrendt, Devin Goodling, Joshua L. Nordlander, Albert Suceava, Joseph Casamento, Betul Akkopru-Akgun, Sebastian Calderon, Ismaila Dabo, Venkatraman Gopalan, Kyle P. Kelley, Andrew M. Rappe, Susan Trolier-McKinstry, Elizabeth C. Dickey, and Jon-Paul Maria
- Thermal Characterization of Ferroelectric Al1–xBxN for Nonvolatile Memory, ACS Appl. Mater. Interfaces 16, 67921 (2024): Kyuwhe Kang, Joseph A Casamento, Daniel C. Shoemaker, Yiwen Song, Erdem Z. Ozdemir, Nathaniel S. McIllwaine, Jon-Paul Maria, Sukwon Choi, and Susan E. Trolier-McKinstry
- Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures. APL Mater. 12, 111108 (2024): Chandrashekhar P. Savant, Anita Verma, Thai-Son Nguyen, Len van Deurzen, Yu-Hsin Chen,Zhiren He,Salva S. Rezaie, Jakob Gollwitzer, Benjamin Gregory, Suchismita Sarker, Jacob Ruff, Guru Khalsa, Andrej Singer, David A. Muller, Huili G. Xing, Debdeep Jena, and Joseph Casamento