Epitaxial Growth of Novel Nitrides: Non-Equilibrium Synthesis
The Casamento group synthesizes and evaluates structure-property-processing relationships of nitride semiconductors, building on metastable nitride alloys, moving beyond AlScN (scarcity and cost) by leveraging high-vacuum sputtering for low-temperature, epitaxial growth. Concentrated solid solutions are accessible in these growth regimes.
Heterogeneous Integration, Device Physics of Novel Nitrides
Ferroelectric nitrides enable high-density 2DEGs and nonvolatile memory in HEMTs. The Casamento group focuses on lattice-matched, ferroelectric nitride thin films, while optimizing heterostructure design and ferroelectric dynamics with TCAD Silvaco simulations. AlN’s non-centrosymmetric wurtzite structure further drives nonlinear photonics and hybrid acousto-optic devices, leveraging monolithic circuit applications and routes toward heterogeneous integration.